Abstract
The Temperature Coefficient of Resistance (TCR) is an important parameter in evaluating whether a multiquantum well material conThefirms the requirements for fabrication of micro bolometer pixels. However, the traditional measurements using a four points probe tester is incapable of performing the electrical characterizations due to the fact that the current flows perpendicularly with in quantum well layers. Herein, a new TCR testing method is designed for quantum well materials. The tester circuit is fabricated and shows great precision and low noise small current. Taking advantage of this TCR tester, the TCR of the quantum well material is detected to be approximately −2.2%/K, which is competitive with the other thermistor materials.
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