Abstract
Above 500K in silicon, isolated hydrogen defect centres scatter intrinsic charge carriers strongly by momentary formation of the neutral atomic ground state, located at the tetrahedral cage centre. This is inferred from the analogous behaviour of muonium, via distinctive muon spin rotation and relaxation signals. A consistent interpretation of a surprisingly large shift of the muon Larmor frequency and the strong transverse and longitudinal spin relaxation rates is achieved in terms of charge-state transition rates into and out of the neutral paramagnetic state. The nature of the charge cycle and the interplay with the crystallographic site are discussed and the electrically active level in the energy gap is determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.