The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence**Supported by the National Natural Science Foundation of China under Grant No 61334001, the National Key Research and Development Program of China under Grant Nos 2016YFB0400600, 2016YFB0400601 and 2016YFB0400100, the National Science Foundation for Young Scientists of China under Grant No 21405076, and

Abstract

InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of the growth temperature of the superlattice from 895°C to 855°C, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures (about 100 K–150 K). Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.