Abstract
In this work, the effects of the focus ion beam (FIB) milling process on the opticalproperties of semiconductor nanostructures were investigated. With this aim, a sensitivematerials system based on InGaAs/GaAs quantum dots with well known and excellentoptical properties was selected for the FIB treatment. The FIB technique was used tolocally remove a metallic mask deposited on top of the quantum dot sample. Thephotoluminescence (PL) signal, collected from the circular openings, was used toinfer the possible damage effects of the ion beam on the properties of the dots.
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