Abstract
Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. 〈100〉-oriented silicon wafers were implanted with 30keV helium to a dose of 3×1016He+/cm2 at 600K. Subsequently, the helium-implanted Si wafers were irradiated with 792MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073K for 30min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed.
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