Abstract
ABSTRACTThe effects of thermal annealing on the minority-carrier diffusion lengths and depletion widths of GaInNAs are studied. We find that diffusion lengths in as-grown, Be- and Si-doped GaInNAs are limited to less than about 0.2 μm for samples with low concentrations of nitrogen. For higher concentrations of nitrogen, the diffusion lengths are not measurable. Annealing under a variety of temperatures and atmospheres typically makes the diffusion lengths even shorter. These short diffusion lengths are not yet long enough for GaInNAs to be useful in a next-generation, four-junction structure. Using undoped GaInNAs in a p–i–n structure is a promising approach to increase device performance. Currently, however, the depletion widths are too small at the bandgaps necessary for solar cells, and annealing does not appear to improve them.
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