Abstract
CIGSeS (Cu(In,Ga)(Se,S)2, (CIGSeS)) absorbers were fabricated by sputtering a quaternary ceramic CIGSe targets and annealing in sulfur-containing atmosphere. Sulfurization was applied at various temperatures to study the variation of composition and microstructure. The performances of cells were also investigated. Sulfurization at high temperature (550 °C) benefits the diffusion of S atoms into absorbers. Gallium tends to diffuse towards surface, and Indium towards the back as absorbers annealed at 550 °C, leading to an enlarged band gap at the surface. With the improvement of anion-deficiency and the band gap gradient introduced by sulfurization, the conversion efficiency of CIGSeS solar cell reaches 13.9%, with the VOC 566 mV.
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