Abstract
The spin-polarized transport is investigated in a new type of magnetic tunnel junctionwhich consists of two ferromagnetic electrodes separated by a magnetic barrier anda nonmagnetic metallic spacer. Based on the transfer matrix method and thenearly-free-electron approximation the dependence of the tunnel magnetoresistance (TMR)and electron-spin polarization on the nonmagnetic layer thickness and the applied biasvoltage are studied theoretically. The TMR and spin polarization show an oscillatorybehaviour as a function of the spacer thickness and the bias voltage. The oscillationsoriginate from the quantum well states in the spacer, while the existence of the magneticbarrier gives rise to a strong spin polarization and high values of the TMR. Our resultsmay be useful for the development of spin electronic devices based on coherenttransport.
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