Abstract
The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated, the photocurrent decreases, especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area, and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance.
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