Abstract
The influence of time-dependent voltages on hot-carrier generation in MOSFETS is studied by transient device simulation. For transient times down to the nanosecond range, no transient effects on hot-carrier formation and injection are found. This result is confirmed experimentally by substrate current measurements under various dynamic voltage conditions down to rise/fall times of 3 ns. This result has important consequences for the interpretation of dynamic stress data, since it means that device-related dynamic effects can be neglected in comparison with interface-related effects in transient ranges relevant to practical applications. >
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