Abstract
We show that the Greek-cross pattern effectively reduces the error due to finite-sized contact in Hall-effect measurements. This pattern enables measurements of areas as small as 4×4 μm, which is comparable to the n-channel area of GaAs field-effect transistors. We find that the sheet carrier concentration agrees well with the value derived from the capacitance-voltage method using this pattern. This indicates that the small Greek-cross pattern is suitable for electrical property characterization of active layers.
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