Abstract
N-channel depletion MOSFETs were irradiated with 140 MeV Si 10+ ions, 100 MeV F 8+ ions and 48 MeV Li 3+ ions in the dose range from 100 krad to 100 Mrad. The MOSFET parameters such as threshold voltage ( V TH), transconductance ( g m) and mobility of carriers ( μ) were determined by systematically studying the I– V characteristics before and after irradiation. The ion irradiated results were compared with Co-60 gamma irradiated results in the same dose range. The degradation in V TH, g m and μ was found to be more for the devices irradiated with Co-60 gamma radiation than that irradiated with swift heavy ions.
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