Abstract
The properties of thin film solar cells based on electrodeposited CuIn(Se,S)2 were investigated. The proposed solar cell fabrication method involves a single-step CuInSe2 thin film electrodeposition followed by sulfurization in a tube furnace to form a CuIn(Se,S)2 quaternary phase. A sulfurization temperature of 450–550°C significantly affected the performance of the CuIn(Se,S)2 thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall bandgap of the CuIn(Se,S)2 thin film. The highest conversion efficiency of 3.12% under air mass (AM) 1.5 illumination was obtained from the 500°C-sulfurized solar cell. The highest External Quantum Efficiency (EQE) was also observed at the sulfurization temperature of 500°C.
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