Abstract
The gate noise from radiation induced defects in MOSFET's and JFET's has been studied for 24.8 MeV electron irradiations up to about 1 x 1016 e/cm2. The flicker noise increase induced in JFET's has been interpreted as due to the defect generation and recombination centers induced by radiation damage within the depletion layer. Finally, it is shown that the noise performance of JFET's is well applicable for high-intensity and high-level radiation detection.
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