Abstract
In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.
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