Abstract
We have studied the effect of oxygen incorporation into AlGaInP on carrier recombination in GaInP/AlGaInP double heterostructures (DH) grown by MBE using a solid phosphorus valved cell. It was found that photoluminescence efficiency and interfacial recombination velocity of the DH were determined by residual oxygen concentration in the AlGaInP layers. The non-radiative recombination rate in AlGaInP was proportional to the oxygen concentration. We achieved AlGaInP with oxygen concentrations below 4×10 16 cm −3 (the detection limit of the SIMS measurement), nonetheless decay of the carriers in the DH was still governed by interfacial recombination. There was a discrepancy in interfacial recombination velocity as a function of oxygen concentration between samples previously grown by MOCVD and our samples currently grown by MBE.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
