Abstract
The growth of TiN films by plasma-enhanced atomic layer deposition is investigated using tetrakis-(dimethylamino) titanium and NH3. In particular, the influence of the NH3 plasma pulse time on the deposited film is discussed in detail. It is found that the film resistivity decreases monotonically to 4.6 × 10−4 Ω · cm by increasing the NH3 plasma pulse time to 25 s, then shows an increase. The former trend is ascribed to some competitive reactions dominated by N radicals and residual O2, i.e., more N radicals originating from longer NH3 plasma pulses produce more Ti–N bonds and restrain the formation of Ti–O and Ti–C bonds in the deposited film. The latter trend is attributed to the generation of additional Ti, N, and C active sites at the saturated bonding surface due to plasma ion bombardment; these can react with residual O2, producing more C–O and Ti–O bonds. Smooth, ultra-thin TiN films (<3 nm) are also successfully demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
