Abstract
AbstractPeriodic amorphous Si (a‐Si)/SiO2 multilayers, fabricated in a conventional plasma enhanced CVD system by alternatively changing the deposition of ultrathin a‐Si film and in‐situ plasma oxidation process, formed (nc‐Si)/SiO2 multilayers after the subsequent KrF laser‐crystallization. Stable electroluminescence (EL) can be achieved at room temperature from laser crystallized multilayers by evaporating ITO and Al as electrodes. The influence of laser energy density on the cur‐ rent‐voltage characteristics and EL property was investigated. It is found that the EL efficiency of laser crystallized sample is changed with laser energy density, and the EL intensity is comparable with that of furnace annealed sample. Our results indicate that the laser crystallization may be an appropriate approach to obtain light‐emitting nanocrystalline Si for future applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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