Abstract
The topography induced by 7 keV particle bombardment of Si substrates has been measured dynamically as a function of particle fluence with a B11 source coupled into a scanning electron microscope. Distinctive differences are observed according to particle species used (Ar, Kr or O) and flux incidence angle to the surface. Strategies for morphology development minimization are discussed and the relevance of the study to sputter profiling and lithographic etching outlined.
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