Abstract
Charged carriers recombination and generation lifetimes as well as DLTS measurements of neutron irradiated silicon detectors have been performed. Radiation-induced changes of the coefficient related to the charge carrier recombination lifetime have been observed to be independent of doping level, type conductivity and original silicon manufacturers. Suggestions about how to avoid the conductivity inversion in n-type silicon detectors at high irradiation levels are also given.
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