Abstract
The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTL): (a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, Al 4083), (b) copper-doped nickel oxide (Cu:NiOx), and (c) Copper oxide (CuO). Through impedance spectroscopy analysis and modelling, it is shown that charge accumulation is decreased in the HTL/perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO. This was indicative from the decrease in double layer capacitance (Cdl) and interfacial charge accumulation capacitance (Cel), resulting in an increase to recombination resistance (Rrec), thus decreased charge recombination events between the three HTLs. Through AFM measurements, it is also shown that the reduced recombination events (followed by the increase in Rrec) are also a result of increased grain size between the three HTLs, thus reduction in the grain boundary area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%), Cu:NiOx (11.45%), and CuO (15.3%)-based devices.
Highlights
Over the last couple of years, perovskite-based solar cells have shown advancements, with an incredibly fast power conversion efficiency (PCE) improvement from 3.8% to 21%.1,2 The high PCE values are a result of several attractive features that hybrid perovskite semiconductors offer, even if casted from solution at low processing temperatures.[3]
The p-i-n structured perovskite solar cell is distinguished compared to other perovskite solar cell device architectures due to its facile processing
The perovskite active layer is placed between two carrier selective electrodes and is in direct contact with the HTL of the transparent bottom electrode and the electron-transport layer (ETL) of the opaque back electrode
Summary
Over the last couple of years, perovskite-based solar cells have shown advancements, with an incredibly fast power conversion efficiency (PCE) improvement from 3.8% to 21%.1,2 The high PCE values are a result of several attractive features that hybrid perovskite semiconductors offer, even if casted from solution at low processing temperatures.[3].
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