Abstract

The influence of traces of transition metals on the electrical properties of the top silicon layer of SIMOX (separation by implanted oxygen) structures was investigated using spreading resistance. A comparative study of silicon containing Fe, Cr and Mo with non-contaminated silicon, implanted and annealed under the same conditions was performed. The resistivity of the top silicon layer was found to be lower for samples which contained transition metal impurities, which is primarily attributed to the n-type doping effects of Cr retained in the top layer.

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