Abstract
The effect of electron occupation on the photoluminescence (PL) from quantum dots (QDs) at low temperature is investigated in this work. The results of PL measurements from self-organised InGaAs/GaAs QDs embedded in a field-effect structure are presented. It was found that the QD PL could be quenched in reverse biased structure. This was related to a dissociation of photo-generated electron–hole pairs in high electric field. Filling of QDs with electrons results in the PL recovery. Further increase of QD electron occupation results in the PL peak redshift (6 meV) and in PL lineshape change. The PL peak intensity decreases and an additional feature on the high energy tail of the main PL peak can be observed. We relate the observed effects to a charge-induced energy shift of the PL resulting from an exchange interaction between electrons and a hole in the QD and to the emission from excited electronic state.
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