Abstract
The effect of 12 MeV energy (3 × 10 12 e −/cm 2 fluency) electron irradiation on Au/Aniline Blue(AB)/ n-Si/Al rectifying device has been studied in terms of the current–voltage ( I– V), capacitance–voltage ( C– V), and capacitance–frequency ( C– f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I– V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation.
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