Abstract
Determination de l'indice de refraction des couches minces de SiO 2 , obtenues par depot chimique en phase vapeur, en fonction des conditions de depot: domaine de temperature allant de 110 a 400°C et rapport O 2 (SiHy de 0,1 a 25). Determination de l'indice en combinant les proprietes structurales et la cinetique de depot
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