Abstract
Undoped Magnesium Ferrite, when functioning as a photoanode in aqueous solution, shows a large transient current response; in contrast Sn-doped material shows no transients and has comparatively small photocurrents. This difference is correlated with the resistivities of the samples and is attributed to the presence of defects in the undoped material. The undoped material shows a photoresponse at 1.1 eV photon energy, well below the 2.18 eV bandgap of MgFe 2O 4. A comparison with the analogous properties of Fe 2O 3 is made.
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