Abstract
The paper presents studies of the structural and optical properties of AlN thin films grown on an AlGaAs/GaAs semiconductor laser heterostructure with the use of preliminary ionic surface cleaning and without it. After cleavage of the heterostructure, a natural surface oxide forms on the facet. In the paper, the ionic etching regime providing the removal of the surface oxide layer without significant defects in the semiconductor heterostructure is determined.
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