Abstract
A general equation describing the motion of domain walls in a magnetic thin film in the presence of an external magnetic field has been reported in this paper. The equation includes all the contributions from the effects of domain wall inertia, damping and stiffness. The effective mass of the domain wall, the effects of both the interaction of the DW with the imperfections in the material and damping have been calculated.
Highlights
Domain wall (DW) motion can be induced by external magnetic fields or by spin polarized currents
Domain wall (DW) propagation [1,2,3,4] in laterally patterned magnetic thin films [5,6,7,8] holds promise for both fundamental research and technological applications and has attracted much attention because of its potential in data storage technology and logic gates, where data can be encoded nonvolatilely as a pattern of magnetic DWs traveling along magnetic wires [9]
Materials with low damping and magnetocrystalline anisotropy [10,11,12] have been the privileged choice of the research community to study DW propagation
Summary
Domain wall (DW) motion can be induced by external magnetic fields or by spin polarized currents. Materials with low damping are more susceptible to changes of the DW spin structure, yielding significant effects on the DW dynamics. In view of complex and multi-purpose spintronic devices, the three main driving mechanisms for DW motion (magnetic field, electric currents and spin wave currents) could be integrated on the same chip, preferring one mechanism over another depending on the specific properties of the DW that one needs to preserve or enhance.
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