Abstract
Ferroelectric domain structure and local switching were studied in LiNbO3 thin films deposited by radio-frequency magnetron sputtering technique on Si (001) substrates in Ar and Ar(60%)+O2(40%) environments. The noticeable difference in surface morphology and ferroelectric domain structure of the investigated films was found. The films sintered in pure Ar environment demonstrated pronounced <0001> texture; nevertheless, neither piezoresponse nor ferroelectric domains were obtained. Films sintered in Ar(60%)+O2(40%) environment possessed the switchable ferroelectric domain structure but disordered grain orientation. The films sintered in Ar after thermal annealing in air preserve <0001> texture and possess self-poled switchable domain structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
