Abstract
The effects of Yb concentration and annealing temperature on the dielectric constant change of Yb-doped HfO2 thin film were investigated. The results show that the dielectric constant of Yb-doped HfO2 increased when doping with Yb after annealing. Compared with the undoped HfO2, the dielectric constant enhancement may result from the crystallographic change from monoclinic phase to the cubic phase. The Yb-doped HfO2 exhibited a lower leakage current than that of undoped HfO2 thin film. The electrical characteristics of Yb-doped HfO2 thin film illustrated that it is a promising gate dielectric layer for future high dielectric constant (high-k) gate dielectric applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
