Abstract
Abstract The polycrystalline Ho4Ni11In20 was obtained by arc-melting of the elements. The subsequent high temperature procedure was used for single crystal growth. Crystal structure of the compound was investigated by X-ray single crystal method: U4Ni11Ga20 type, C 2/m, a = 22.4528(17), b = 4.2947(3), c = 16.5587(13) Å, β = 124.591(5)°, R1 = 0.0276, wR2 = 0.0493 for 1989 independent reflections with [I>2σ(I)]. The structure is composed of three-dimensional network from Ni and In atoms in which Ho atoms fill distorted pentagonal channels.
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