Abstract
Using the nonequilibrium Green function method, the electrical behavior of a double gatebilayer graphene structure is investigated. Due to energy bandgap opening when potentialenergies in the layers are different, a clear gap of electrical current is observed. Thesensitivity of this phenomenon to device parameters (gate length, temperature) has beenconsidered systematically. It appears that the threshold voltage can be controlledby tuning the gate voltages and/or the Fermi energy. Our obtained results maybe useful and provide new suggestions for further experimental investigations.
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