Abstract
The alloy composition of an AlGaN film grown on a GaN hexagonal pyramidal structure is studied by cathode luminescence spectroscopy. The samples are made by selective area growth mode of metal organic vapour phase epitaxy (MOVPE). It was found that the Al composition is lower than the nominal composition at the bottom of the pyramid, while it was higher than the nominal composition near the top of the pyramid. Analysing the composition as a function of the position on the facets, the diffusion length of Ga was estimated to be 310 nm and 915 nm on the (0001) and facet, respectively. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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