Abstract
A model study of the promising new material Cd0.92Mg0.08Te:In, intended for X-ray and gamma radiation detectors operating at room temperature, was carried out. The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.92Mg0.08Te:In. An analysis of the calculated values of resistivity ρ and concentrations of free charge carriers, life time of non-equilibrium electrons τn, and holes τp, charge collection efficiency η with different composition of impurities and defects in this material at temperature T = 298 K was carried out. The optimal ranges of energy and concentration of alloying deep donor, which ensure a stable high-resistive state and acceptable values of η, are established. Compensation of cadmium vacancies with indium admixture was studied. Assumption was made regarding possibility of increasing the operating time of the detector having semi-insulating properties and great charge collection efficiency. A direction for further research has been formulated in order to clarify the nature of a suitable doping deep donor that ensures stable properties of the detector.
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