Abstract
Abstract We fabricated Au/n-InP/In and Au/In 2 S 3 /n-InP/In junctions and investigated their electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n-type InP substrate with spray pyrolysis method at 200 °C substrate temperature. Detailed structural and optical properties of the film have been investigated by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and absorption techniques. The band gap energy of In 2 S 3 by using spectral data of absorption has been determined to be about 2.80 eV. The values of the ideality factor and barrier height of the Au/n-InP/In and Au/In 2 S 3 /n-InP/In junctions have been found as n = 1.01, Φ b = 0.469 eV and n = 1.07, Φ b = 0.543 eV, respectively. Likewise, the values of barrier height and series resistance of both samples have been obtained from Norde method and they have been calculated as 0.456 eV, 59.081 Ω for Au/n-InP/In junction and 0.518 eV, 101.302 Ω for Au/In 2 S 3 /n-InP/In junction, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
