Abstract
Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurements were used to investigate electron tunnel, storage and discharging characteristic. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The de-creasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer. The C-t measurement results show that the charges transfer in the structure strongly de-pends on the hold time and the flatband voltage decreases markedly with increasing the hold time.
Highlights
Layer nc-Si structure in SiO2 matrix was investigated by some research groups,[6,7,8] where electrons were injected into the multilayer structure via a FN tunneling process at high programming voltages
We investigated the charge storage mechanism in stacked nc-Si memory structure by using capacitance voltage (C-V) measurement and capacitance-time (C-t) measurements
As can seen in figure 1, at low programming bias, a higher programming bias applied at the gate results in a bigger shift of the flatband voltage, which is caused by more and more electrons trapping in the structure
Summary
Layer nc-Si structure in SiO2 matrix was investigated by some research groups,[6,7,8] where electrons were injected into the multilayer structure via a FN tunneling process at high programming voltages. An ultrahigh stored charge density is demonstrated in the multilayer nc-Si structure. We have prepared the stacked nc-Si memory structure where double layers of nc-Si dots embedded within triple SiNx barriers. We investigated the charge storage mechanism in stacked nc-Si memory structure by using capacitance voltage (C-V) measurement and capacitance-time (C-t) measurements
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