Abstract
Defects constructing net-like cell structures in 4-in semi-insulating gallium arsenide single crystal were studied by the method of chemical etching, X-ray anomalous transmission topography, and transmission electron microscopy. The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are a cluster of small-angle grain boundaries caused by the movement and interaction of high density of dislocations, the cell wall is the typical small-angle grain boundary. The phase difference among the small-angle grain boundaries increases with the density of dislocations.
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