Abstract
This work has explored the possible defects in Mn-doped SnO2 and compared the effects of interstitial Mn and oxygen vacancies on the electronic structure of SnO2. Combining the DFT calculations and experimental measurements, we found that when the Mn-doped SnO2 is synthesised under Sn-rich or O-poor conditions, the defect pair of Mn substitution and interstitial rather than oxygen vacancy will be formed, which induces energy band across the Fermi level and significantly affects the electronic structure of SnO2. With the Mn interstitials, stable intrinsic multi-level resistive states and optical SET can be achieved in the Mn-doped SnO2 memristors. This result can provide guidance in the fabrications of defective metal oxides and promote the investigations on cationic interstitial triggered multi-level resistive switching and optoelectronic memristors.
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