Abstract
The capacitance of a p- n junction is unlike the capacitance between parallel metal plates in that the charge carriers in the p- n junction are distributed throughout the device rather than fixed at well-separated distances. An analysis of both the displacement current and the two charge-carrier currents in the transition region leads to a rigorous solution for the differential capacitance of a p- n junction. It is shown that the capacitance of the p- n junction is given by the integral of the differential concentration of either holes or electrons, as hypothesized by Shockley. Analysis of the capacitance is obtained by numerical integration using the Automatic Taylor Series method. The results of this analysis are as follows. The p- n junction capacitance is nearly a square-root function of the voltage, in agreement with the Schottky theory. However, the capacitance measurements cannot be used to determine the junction barrier height.
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