Abstract
We study Si adatom diffusion process near Si/Ge stepped surfaces from first-principles. Dependence of surface growth morphology on growing conditions such as temperature is not clearly understood. We calculate Ehrlich-Schwoebel(ES) barrier of stepped surfaces from first-principles and analyze adatom diffusion process to understand growth mechanism of the surfaces. The configuration of the surfaces with ES barrier would play a key role in the diffusion process because it controls hopping rates in the presence of step edges. Our results are likely to help correctly access the adatom diffusion process on the surfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
