Abstract
Abstract A nanosecond-pulsed laser bonding process with a shadow mask for MEMS packaging applications has been successfully demonstrated. YAG Surelit II laser with pulse duration of 4–6 ns, a wavelength of 355 nm and a focal diameter of 1 mm is used to provide the bonding energy for glass-to-silicon bonding using a 4 μm thick indium layer as the bonding material. The optimal bonding parameters are found experimentally when the laser energy is between 8 and 22 mJ and multiple laser shots are used. Furthermore, a regular white paper with pre-defined patterns has been successfully used as the masking material to achieve selective heating and bonding. Simulation results show that localized heating can be achieved by using the nanosecond laser. One micro-second after the laser power is applied, the temperature at the indium/silicon interface drops from 2500 to 760 °C and drops further to 43 °C after 1 ms. This nanosecond laser power is believed to provide suitable energy and time for localized heating and bonding applications for MEMS.
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