Abstract
AbstractGrowth kinetics of binary systems in liquid phase electroepitaxy (LPEE) is analysed in terms of one‐dimensional forced diffusion with initial and boundary conditions reflecting the features of various modifications of LPEE. Electromigration of a solute in the melt and the Peltier effect at the interface between liquid and solid phases induced by electric current are taken into account.Three LPEE modifications are considered here. The first modification is when liquid phase is constantly riched due to dissolution of the semiconductor cathode. The second one‐when liquid phase is constantly riched from vapour phase by controlled vapour pressure. The third one‐when any source of the melt enrichment is absent.This consideration is limited by the assumption that the deviation of the solution heighs or convection doesn' affect the steady‐state temperature at the interfaces between solid and liquid phases. The obtained expressions for growth rate show that quantitative results of the epitaxial growth are closely connected with a concrete method of LPEE realization.
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