Abstract
At a wavelength of 546 nm the change of the ellipsometric angles δΔ (relative phase change) and δψ (relative amplitude change) has been studied on clean cleaved silicon (111) surfaces during adsorption of oxygen. δψ increases linearly with exposure up to a saturation value. The saturation dose, i.e. also the sticking coefficient for the corresponding process depends exponentially on the mean step density of the surface. δΔ is nearly independent of step density. The interpretation in terms of a macroscopic theory (Drude model) gives evidence of two adsorption processes, the formation of a monolayer of oxygen controlled by step density and a subsequent further oxidation process.
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