Abstract
Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ∼1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
