Abstract
One of the constraints in using standard FloatZone silicon layer as base material for tracking in particle physics is its radiation hardness. The detection efficiency is degraded by the introduction of defects in the silicon crystal and charge trapping becomes the main problem. The Charge Collection Efficiency (CCE) is a relevant parameter in order to determine the detection performance of such devices. A state-of-the-art test system named “Système de mesure de collection de charge” (SYCOC) has been developed for the characterization of diode and microstrip silicon sensors before and after irradiation. The system is designed to perform Charge Collection Efficiency (CCE) and Transient Current Technique (TCT) measurements with laser and radioactive sources in a controlled environment. Initial measurements on diodes are presented.
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