Abstract
A time-tagging hybrid silicon pixel detector developed for beam tracking in the NA62 experiment has been tested in a dedicated test-beam at CERN with 10 GeV/c hadrons. Measurements include time resolution, detection efficiency and charge sharing between pixels, as well as effects due to bias voltage variations. A time resolution of less than 150 ps has been measured with a 200 μm thick silicon sensor, using an on-pixel amplifier-discriminator and an end-of-column DLL-based time-to-digital converter.
Highlights
Detectors under testThe sensor is a planar p-in-n silicon produced by Fondazione Bruno Kessler from 200 μm thick float zone wafers
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A time resolution of less than 150 ps has been measured with a 200 μm thick silicon sensor, using an on-pixel amplifier-discriminator and an end-of-column DLL-based time-to-digital converter
Summary
The sensor is a planar p-in-n silicon produced by Fondazione Bruno Kessler from 200 μm thick float zone wafers. The electrical signal is propagated from the pixel through the bonding bump to the amplifier, with average gain of 65 mV/fC and a r.m.s. spread smaller than 2%. Few tens of Volt were sufficient to completely deplete the sensor, that was operated at high over-depletion (300 V) for a large fraction of the test-beam. Bias voltages were set to 100, 200 and 400 V on selected DUTs in order to test the system performance. The thresholds during the test were set to an average value of 0.7 fC and showed a r.m.s. spread of 0.17 fC. With these thresholds, a very low level of noise was measured during the whole test-beam, as no pixel hits were recorded in the out-of-spill period
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