Ternary mixed crystal effects on electron-interface optical phonon interactions in InxGa1−xN/GaN quantum wells

Abstract

Based on the modified random-element isodisplacement model and dielectric continuum model, the dispersions of interface optical phonons, electron-interface phonon interaction and ternary mixed crystal effect on interface optical phonons in InxGa1−xN/GaN quantum wells are studied in a fully numerical manner. The results indicate that there are two indium concentration intervals that interface optical phonons exist. The indium concentration has important effects on the dispersions and electron–phonon interactions of interface optical phonons. The electron–IO phonon interactions in higher indium concentration are more important than that in lower indium concentration.