Abstract
The diagonal and Hall resistance were studied at quantized-Hall-effect-to-insulator transitions in a dilute 2D electron system in Si(100), in the milli-kelvin temperature range. The Hall resistance remains close to its classical value, H/nec, even when the temperature-activated diagonal resistivity ρ xx rises to 4 × 10 6 ohm/square. Experimental data show that the insulating state may develop directly from at least 3 metallic states with quantized Hall resistance at filling factors ν = 1, 2 and 6. Persistence of well resolved Landau levels up to the final insulating stage makes it possible to trace the delocalized states at the QHE to insulator transition. Within experimental uncertainty no evidence for their exit through the Fermi energy has been found. The results are discussed in terms of recent theoretical models for the transition to the insulating state.
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