Abstract
-type s-Si/SiGe multiquantum wells MQW of different well widths and barrier composition grown by UHV-chemical vapor deposition CVD .The measured intersubband transition energies are compared with the theoretical results of a tight-bindingmodel which provides the electronic band structure of the complete MQW system throughout the wholeBrillouin zone. Our findings demonstrate both the high quality of the CVD grown MQWs and the effectivenessof the adopted tight-binding model in describing band profiles and electronic structures of SiGe multilayersystems. In particular we have evaluated the conduction band offsets in the investigated structures.DOI: 10.1103/PhysRevB.79.085302 PACS number s : 78.67.De, 73.21.Fg, 68.65.Fg, 81.15.Gh
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
