Abstract
A temperature-switching irradiation (TSI) sequence has been developed that is based on a first-principles understanding of interface-trap buildup and annealing. The dynamics of interface-trap buildup and annealing during elevated temperature irradiation are described in detail to provide background, context, and enhanced understanding of the TSI method. The method is shown to be a practical and conservative test for enhanced low-dose-rate sensitivity (ELDRS) in linear bipolar devices and ICs. Examples of TSI sequences are shown for target doses up to 200 krad(Si), a range of great practical interest for space applications. The method can be adapted for higher dose applications via similar approaches. Devices that do not exhibit ELDRS respond similar to TSI and high-dose-rate irradiation.
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